Solution-processed metal oxide arrays using femtosecond laser ablation and annealing for thin-film transistors
Author:
Affiliation:
1. Institute of Optoelectronic Display
2. National & Local United Engineering Lab of Flat Panel Display Technology
3. Fuzhou University
4. Fuzhou 350002
5. China
Abstract
A femtosecond laser is proposed to pattern and anneal a metal oxide layer for simple fabrication of metal oxide thin-film transistor arrays.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Fujian Province
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC01953J
Reference57 articles.
1. Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics
2. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
3. An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates
4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
5. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
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