Boosting Modulation of Oxide Semiconductors via Voltage-Based Ambi-Ionic Migration
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
Funder
Samsung
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b11854
Reference26 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Metal oxide semiconductor thin-film transistors for flexible electronics
3. Simple Method to Enhance Positive Bias Stress Stability of In–Ga–Zn–O Thin-Film Transistors Using a Vertically Graded Oxygen-Vacancy Active Layer
4. Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors
5. Electrochemical Determination of the Superoxide Ion Concentration from KO2 Dissolved in Dimethyl Sulfoxide
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