Lateral Two-Dimensional Material Heterojunction Photodetectors with Ultrahigh Speed and Detectivity-Reference-Cited by-同舟云学术

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Lateral Two-Dimensional Material Heterojunction Photodetectors with Ultrahigh Speed and Detectivity

Published:2019-01-17 Issue:6 Volume:11 Page:6384-6388
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Ding-Rui,Hofmann Mario¹^ORCID,Yao He-Ming²,Chiu Sheng-Kuei³,Chen Szu-Hua¹,Luo Yi-Ru,Hsu Chia-Chen^ORCID,Hsieh Ya-Ping³^ORCID

Affiliation:

1. Department of Physics, National Taiwan University, Taipei, Taiwan 106

2. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong

3. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan 106

Funder

Academia Sinica

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b19093

Reference29 articles.

1. Heterostructures based on two-dimensional layered materials and their potential applications

2. Electrostatics of lateral p-n junctions in atomically thin materials

3. Carrier Delocalization in Two-Dimensional Coplanar p–n Junctions of Graphene and Metal Dichalcogenides

4. Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

5. High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

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