Electrostatics of lateral p-n junctions in atomically thin materials
Author:
Affiliation:
1. Department of Electrical Engineering, Columbia University, New York, New York 10027, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4994047
Reference28 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. Single-layer MoS2 transistors
3. Electrical contacts to two-dimensional semiconductors
4. Vertical and in-plane heterostructures from WS2/MoS2 monolayers
5. Lateral graphene p–n junctions formed by the graphene/MoS2hybrid interface
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