Gate Tunable Lateral 2D Pn Junctions: An Analytical Study of Its Electrostatics
Author:
Affiliation:
1. Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, Spain
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx7/7729/10016255/10024312.pdf?arnumber=10024312
Reference19 articles.
1. Two-dimensional p-n junction under equilibrium conditions
2. Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions
3. Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications
4. Electrostatics of lateral p-n junctions in atomically thin materials
5. WSe 2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
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