Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions-Reference-Cited by-同舟云学术

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Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Published:2014-08-11 Issue:1 Volume:4 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Tian He,Tan Zhen,Wu Can,Wang Xiaomu,Mohammad Mohammad Ali,Xie Dan,Yang Yi,Wang Jing,Li Lain-Jong,Xu Jun,Ren Tian-Ling

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep05951.pdf

Reference40 articles.

1. Geim, A. K. & Novoselov, K. S. The rise of graphene. Nat. Mater. 6, 183–191 (2007).

2. Novoselov, K. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).

3. Bolotin, K. I. et al. Ultrahigh electron mobility in suspended graphene. Solid State Commun. 146, 351–355 (2008).

4. Lee, C., Wei, X., Kysar, J. W. & Hone, J. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science 321, 385–388 (2008).

5. Balandin, A. A. et al. Superior thermal conductivity of single-layer graphene. Nano Lett. 8, 902–907 (2008).

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