Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe<sub>2</sub> Thin Film Transistors-Reference-Cited by-同舟云学术

Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe₂ Thin Film Transistors

Published:2023-06-28 Issue:13 Volume:17 Page:12798-12808
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Li Xintong¹^ORCID,Zhou Peng²,Hu Xuan²,Rivers Ethan¹,Watanabe Kenji³^ORCID,Taniguchi Takashi⁴^ORCID,Akinwande Deji¹^ORCID,Friedman Joseph S.²^ORCID,Incorvia Jean Anne C.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States

2. Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080-3021, United States

3. Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

4. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

Air Force Research Laboratory

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Division of Electrical, Communications and Cyber Systems

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c03932

Reference48 articles.

1. Single-layer MoS2 transistors

2. Graphene transistors

3. Black phosphorus field-effect transistors

4. Electron and Ambipolar Transport in Organic Field-Effect Transistors

5. Recent advances in n-type and ambipolar organic semiconductors and their multi-functional applications

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