High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios-Reference-Cited by-同舟云学术

High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

Published:2014-10-31 Issue:8 Volume:11 Page:936-942
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Miao Jinshui¹²,Hu Weida¹²,Guo Nan¹²,Lu Zhenyu¹²,Liu Xingqiang³,Liao Lei³,Chen Pingping¹²,Jiang Tao⁴,Wu Shiwei⁴,Ho Johnny C.⁵,Wang Lin¹²,Chen Xiaoshuang¹²,Lu Wei¹²

Affiliation:

1. National Laboratory for Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; 500 Yutian Road Shanghai 200083 China

2. Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei Anhui 230026 China

3. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education; Wuhan University; Wuhan 430072 China

4. State Key Laboratory of Surface Physics and Department of Physics; Fudan University; Shanghai 200433 China

5. Department of Physics and Materials Science; City University of Hong Kong, SAR; China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201402312/fullpdf

Reference53 articles.

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4. Controlled Ambipolar-to-Unipolar Conversion in Graphene Field-Effect Transistors Through Surface Coating with Poly(ethylene imine)/Poly(ethylene glycol) Films

5. Sub-100 nm Channel Length Graphene Transistors

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