Atomic Layer Epitaxy of Aluminum Nitride: Unraveling the Connection between Hydrogen Plasma and Carbon Contamination
Author:
Affiliation:
1. Center for Computational Materials Science, Naval Research Laboratory, Washington, D.C. 20375, United States
Funder
Office of Naval Research
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b04104
Reference30 articles.
1. Nucleation and growth of aluminum nitride: self-limiting reactions and the regeneration of active sites using sequential exposures of trimethylaluminum and ammonia on silica at 600 K
2. Properties of AlN grown by plasma enhanced atomic layer deposition
3. Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
4. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
5. Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1−xN thin films at low temperatures
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