Nucleation and growth of aluminum nitride: self-limiting reactions and the regeneration of active sites using sequential exposures of trimethylaluminum and ammonia on silica at 600 K-Reference-Cited by-同舟云学术

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Nucleation and growth of aluminum nitride: self-limiting reactions and the regeneration of active sites using sequential exposures of trimethylaluminum and ammonia on silica at 600 K

Published:1993-10-01 Issue:10 Volume:5 Page:1424-1430
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Bartram M. E.,Michalske T. A.,Rogers J. W.,Paine R. T.

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm00034a010

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal atomic layer deposition of aluminum oxide, nitride, and oxynitride: A mechanistic investigation;AIP Advances;2024-03-01

2. Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride;The Journal of Physical Chemistry C;2023-08-17

3. On the limitations of thermal atomic layer deposition of InN using ammonia;Journal of Vacuum Science & Technology A;2023-02-21

4. Thin-film (Al)BCN materials synthesized by sequential precursor pulses to mimic atomic layer deposition;AIP Advances;2023-02-01

5. Surface chemical mechanisms of trimethyl aluminum in atomic layer deposition of AlN;Journal of Materials Chemistry C;2023

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