Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1−xN thin films at low temperatures
Author:
Affiliation:
1. UNAM – National Nanotechnology Research Center
2. Bilkent University
3. Ankara, Turkey
4. Institute of Materials Science and Nanotechnology
Abstract
The authors report on the use of hollow cathode plasma for low-temperature plasma-assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1−xN thin films with low impurity concentrations.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/TC/C3TC32418D
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