A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices

Abstract

This paper reviews some of the basic issues in homoepitaxial growth of III-nitrides to enable a vertical device technology. It focuses on the use of metal organic chemical vapor deposition (MOCVD) to grow GaN and explores the effects of the native substrate characteristics on material quality, interface composition, and device performance. A review of theoretical work understanding dopants in the ultra-wide III-nitride semiconductors, AlN and BN, is also included for future efforts expanding the technology into those materials.