Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM-Reference-Cited by-同舟云学术

Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM

Published:2019-02-21 Issue:11 Volume:35 Page:3897-3906
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Qiu Jiantai Timothy¹,Samanta Subhranu,Dutta Mrinmoy,Ginnaram Sreekanth,Maikap Siddheswar¹^ORCID

Affiliation:

1. Division of Gynecologic Oncology, Department of Obstetrics and Gynecology, Chang Gung Memorial Hospital (CGMH), Linkou, Tao-Yuan 33302, Taiwan

Funder

Chang Gung Memorial Hospital, Linkou

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.8b04090

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5. TaO x -based resistive switching memories: prospective and challenges

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