Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer
Author:
Affiliation:
1. Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium
2. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
Funder
China Scholarship Council
Electronic Components and Systems for European Leadership
Publisher
American Chemical Society (ACS)
Subject
Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.0c00741
Reference48 articles.
1. Selective-Area Atomic Layer Deposition Using Poly(vinyl pyrrolidone) as a Passivation Layer
2. Functional model for analysis of ALD nucleation and quantification of area-selective deposition
3. Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal–Dielectric Patterns
4. Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning
5. Atomic-scale simulation of ALD chemistry
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