Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors-Reference-Cited by-同舟云学术

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors

Published:2017-03-21 Issue:13 Volume:9 Page:11942-11949
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Bo-Wei,Chang Ting-Chang¹^ORCID,Chang Kuan-Chang,Hung Yu-Ju,Huang Shin-Ping,Chen Hua-Mao,Liao Po-Yung,Lin Yu-Ho,Huang Hui-Chun,Chiang Hsiao-Cheng,Yang Chung-I,Zheng Yu-Zhe,Chu Ann-Kuo,Li Hung-Wei²,Tsai Chih-Hung²,Lu Hsueh-Hsing²,Wang Terry Tai-Jui³,Chang Tsu-Chiang³

Affiliation:

1. Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 701 Taiwan, Republic of China

2. New Display Process Research Division, AU Optronics Company, Limited, Taoyuan 300, Taiwan

3. Industrial Technology Research Institute, 195 Section 4, Chung Hsing Road, Hsinchu 31040, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b14525

Reference27 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

3. Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

4. Investigation of carrier transport behavior in amorphous indium–gallium–zinc oxide thin film transistors

5. Investigation of temperature-dependent asymmetric degradation behavior induced by hot carrier effect in oxygen ambiance in In–Ga–Zn-O thin film transistors

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