Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks-Reference-Cited by-同舟云学术

Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks

Published:2017-03-02 Issue:10 Volume:9 Page:9102-9109
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Schulte-Braucks C.¹^ORCID,Narimani K.¹,Glass S.¹,von den Driesch N.¹^ORCID,Hartmann J. M.²³,Ikonic Z.⁴,Afanas’ev V. V.⁵,Zhao Q. T.¹,Mantl S.¹,Buca D.¹

Affiliation:

1. Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany

2. Université Grenoble Alpes, 38000 Grenoble, France

3. CEA, LETI, Minatec Campus, 38054 Grenoble, France

4. Institute of Microwaves and Photonics, Schools of Electronic and Electrical Engineering, University of Leeds, Leeds L2 9JT, United Kingdom

5. Semiconductor Physics Laboratory, KU Leuven, 3001 Leuven, Belgium

Funder

Bundesministerium für Bildung und Forschung

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b15279

Reference24 articles.

1. Si–Ge–Sn alloys: From growth to applications

2. Lasing in direct-bandgap GeSn alloy grown on Si

3. Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs

4. Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

5. Possibility of increased mobility in Ge-Sn alloy system

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