Performance benchmarking of p-type In<inf>0.65</inf>Ga<inf>0.35</inf>As/GaAs<inf>0.4</inf>Sb<inf>0.6</inf> and Ge/Ge<inf>0.93</inf>Sn<inf>0.07</inf> hetero-junction tunnel FETs-Reference-Cited by-同舟云学术

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Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Pandey R.,Schulte-Braucks C.,Sajjad R. N.,Barth M.,Ghosh R. K.,Grisafe B.,Sharma P.,von den Driesch N.,Vohra A.,Rayner B.,Loo R.,Mantl S.,Buca D.,Yeh C-C.,Wu C-H.,Tsai W.,Antoniadis D.,Datta S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838455.pdf?arnumber=7838455

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