Self-Running Ga Droplets on GaAs (111)A and (111)B Surfaces-Reference-Cited by-同舟云学术

Self-Running Ga Droplets on GaAs (111)A and (111)B Surfaces

Published:2013-08-16 Issue:16 Volume:5 Page:7709-7713
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kanjanachuchai Songphol¹,Euaruksakul Chanan²

Affiliation:

1. Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand

2. Synchrotron Light Research Institute, 111 University Avenue, Muang District, Nakhon Ratchasima 30000, Thailand

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/am402455u

Reference26 articles.

1. Droplet Epitaxy Quantum Ring Structures

2. Atomic-scale mapping of quantum dots formed by droplet epitaxy

3. Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

4. Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100)

5. Kinetic model of local droplet etching

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local droplet etching of a vicinal InGaAs(111)A metamorphic layer;Applied Surface Science;2024-10

2. Monte Carlo Simulation of Gallium Droplet Motion on Vicinal GaAs(111) Substrates with Different Misorientation Directions;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

3. Treatment and aging studies of GaAs(111)B substrates for van der Waals chalcogenide film growth;Journal of Vacuum Science & Technology B;2024-03-27

4. UV-Induced Negative Growth of In Nanodroplets and Mounds from Ultrathin In Layers on Sublimated InP(110);Crystal Growth & Design;2023-09-19

5. Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence;Crystal Growth & Design;2023-09-18