Monte Carlo Simulation of Gallium Droplet Motion on Vicinal GaAs(111) Substrates with Different Misorientation Directions-Reference-Cited by-同舟云学术

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Monte Carlo Simulation of Gallium Droplet Motion on Vicinal GaAs(111) Substrates with Different Misorientation Directions

Published:2024-06-28 Issue: Volume: Page:200-203
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Container-title:2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Merkulin Kirill V.¹,Spirina Anna A.²,Shwartz Nataliya L.²

Affiliation:

1. Novosibirsk State Technical University,Department of Semiconductor Devices and Microelectronics,Novosibirsk,Russia

2. Rzhanov Institute of Semiconductor Physics SB RAS,Group of Simulation of Electronic and Technological Microelectronic Processes,Novosibirsk,Russia

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10614947/10614948/10615064.pdf?arnumber=10615064

Reference11 articles.

1. Droplet Epitaxy of Nanostructures

2. Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

3. Self-Running Ga Droplets on GaAs (111)A and (111)B Surfaces

4. On the Secondary Droplets of Self-Running Gallium Droplets on GaAs Surface

5. Ordering of the Nanoscale Step Morphology As a Mechanism for Droplet Self-Propulsion

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