Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

Published:2008-04-28 Issue:15 Volume:77 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Colombo C.,Spirkoska D.,Frimmer M.,Abstreiter G.,Fontcuberta i Morral A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.155326/fulltext

Reference17 articles.

1. Tunable Light Emission from Quantum-Confined Excitons in TiSi2-Catalyzed Silicon Nanowires

2. High Aspect Ratio Silicon Wire Array Photoelectrochemical Cells

3. Epitaxial growth of silicon nanowires using an aluminium catalyst

4. Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

5. Au-Free Epitaxial Growth of InAs Nanowires

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