Au-Free Epitaxial Growth of InAs Nanowires-Reference-Cited by-同舟云学术

Au-Free Epitaxial Growth of InAs Nanowires

Published:2006-07-13 Issue:8 Volume:6 Page:1817-1821
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Mandl Bernhard¹,Stangl Julian¹,Mårtensson Thomas¹,Mikkelsen Anders¹,Eriksson Jessica¹,Karlsson Lisa S.¹,Bauer Günther¹,Samuelson Lars¹,Seifert Werner¹

Affiliation:

1. Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden, Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, Altenbergerstr. 69, A-4040 Linz, Austria, Synchrotron Radiation Research, Lund University, Box 118, S-221 00 Lund, Sweden, and National Centre for High-Resolution Electron Microscopy (nCHREM), Lund University, Box 124, S-221 00 Lund, Sweden

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl060452v

Reference25 articles.

1. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

2. Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

3. Solid-phase diffusion mechanism for GaAs nanowire growth

4. Vertically aligned, catalyst-free InP nanowires grown by metalorganic chemical vapor deposition

Cited by 208 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts;Nature Communications;2023-07-27

2. Effect of impurities on charge and heat transport in tubular nanowires;Nanotechnology;2023-06-01

3. New growth mechanism of InAs nanowires array in selective-area growth by MOCVD;Vacuum;2023-02

4. InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection;Nanoscale;2023

5. A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates;Vacuum;2022-07