High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays-Reference-Cited by-同舟云学术

High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays

Published:2012-08-28 Issue:9 Volume:6 Page:8166-8172
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lee Wootae¹,Park Jubong¹,Kim Seonghyun¹,Woo Jiyong²,Shin Jungho¹,Choi Godeuni²,Park Sangsu³,Lee Daeseok²,Cha Euijun¹,Lee Byoung Hun¹³,Hwang Hyunsang²

Affiliation:

1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea

2. Department of Material Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyungbuk 790-784, Republic of Korea

3. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn3028776

Reference31 articles.

1. Nanoionics-based resistive switching memories

2. Resistive switching in transition metal oxides

3. Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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