Interface-Type Ionic Memristor for Energy-Efficient Neuromorphic Hardware-Reference-Cited by-同舟云学术

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Interface-Type Ionic Memristor for Energy-Efficient Neuromorphic Hardware

Published:2024-04-30 Issue:5 Volume:6 Page:3013-3023
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yoo Chan Sik¹²,Lee Hong-Sub¹²^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea

2. Integrated Education Institute for Frontier Science & Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea

Funder

National Research Foundation of Korea

Gyeonggi-do Regional Research Center

Kyung Hee University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00373

Reference64 articles.

1. The Physics of Ferroelectric Memories

2. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

3. GeSbTe deposition for the PRAM application

4. Domain-wall dynamics driven by adiabatic spin-transfer torques

5. A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

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