Graphene oxide/Al2O3-based diffusive memristor cells: enabling robust crossbar arrays for multidisciplinary applications
Author:
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s12598-024-02640-w.pdf
Reference43 articles.
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3. Lee J, Lu WD. On-demand reconfiguration of nanomaterials: when electronics meets ionics. Adv Mater. 2018;30(1):1702770. https://doi.org/10.1002/adma.201702770.
4. Park JH, Kim D, Kang DY, Jeon DS, Kim TG. Nanoscale 3D stackable Ag-doped HfOx-based selector devices fabricated through low-temperature hydrogen annealing. ACS Appl Mater interfaces. 2019;11(32):29408. https://doi.org/10.1021/acsami.9b08166.
5. Kwon JY, Park JH, Kim TG. Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices. Appl Phys Lett. 2015;106(22): 223506. https://doi.org/10.1063/1.4922252.
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