Geometric Design of Confined Conducting Filaments in Resistive Random Access Memory by Al2O3 Nanodome-Shaped Arrays (NDSAs) via Glancing-Angle Deposition Technology Toward Neuromorphic Computing-Reference-Cited by-同舟云学术

Geometric Design of Confined Conducting Filaments in Resistive Random Access Memory by Al2O3 Nanodome-Shaped Arrays (NDSAs) via Glancing-Angle Deposition Technology Toward Neuromorphic Computing

Published:2021-11-15 Issue:12 Volume:3 Page:1757-1766
ISSN:2639-4979
Container-title:ACS Materials Letters
language:en
Short-container-title:ACS Materials Lett.

Author:

Shen Ying-Chun¹²³,Shih Yu-Chuan¹²³,Wang Yi-Chung¹²³,Wang Kuangye¹²³,Yang Tzu-Yi¹²³,Cyu Ruei-Hong¹²³,Yu Yi-Jen⁴,Chueh Yu-Lun¹²³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan

2. Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan

3. Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan

4. Instrument Center, National Tsing Hua University, Hsinchu, 30013, Taiwan

Funder

Ministry of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Biomedical Engineering,General Chemical Engineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acsmaterialslett.1c00513

Reference37 articles.

1. The missing memristor found

2. Memristors—From In‐Memory Computing, Deep Learning Acceleration, and Spiking Neural Networks to the Future of Neuromorphic and Bio‐Inspired Computing

3. Waser, R. Nanotechnology; Wiley–VCH: Weinheim, Germany, 2008; p 3.

4. Resistance random access memory

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