A General Design Strategy for Block Copolymer Directed Self-Assembly Patterning of Integrated Circuits Contact Holes using an Alphabet Approach-Reference-Cited by-同舟云学术

A General Design Strategy for Block Copolymer Directed Self-Assembly Patterning of Integrated Circuits Contact Holes using an Alphabet Approach

Published:2015-01-08 Issue:2 Volume:15 Page:805-812
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yi He¹,Bao Xin-Yu¹,Tiberio Richard¹,Wong H.-S. Philip¹

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

Funder

Semiconductor Research Corporation

Division of Civil, Mechanical and Manufacturing Innovation

W.M. Keck Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl502172m

Reference48 articles.

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3. Carbon Nanotube Circuit Integration up to Sub-20 nm Channel Lengths

4. Doris, B.; Ieong, M.; Kanarsky, T.; Zhang, Y.; Roy, R. A.; Dokumaci, O.; Zhibin, R.; Jamin, F.F.; Shi, L.; Natzle, W.InExtreme scaling with ultra-thin Si channel MOSFETs, IEEE International Electron Devices Meeting (IEDM) 2002;IEEE:Bellingham, WA, 2002; pp267–270.

5. Sub-10 nm Carbon Nanotube Transistor

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