Carbon Nanotube Circuit Integration up to Sub-20 nm Channel Lengths-Reference-Cited by-同舟云学术

Carbon Nanotube Circuit Integration up to Sub-20 nm Channel Lengths

Published:2014-04-01 Issue:4 Volume:8 Page:3434-3443
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Shulaker Max Marcel¹,Van Rethy Jelle²,Wu Tony F.¹,Suriyasena Liyanage Luckshitha¹,Wei Hai¹,Li Zuanyi¹³,Pop Eric¹,Gielen Georges²,Wong H.-S. Philip¹,Mitra Subhasish¹⁴

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

2. Department of Electrical Engineering, KU Leuven, Leuven, Belgium, B-3001

3. Department of Physics, University of Illinois Urbana−Champaign, Urbana, Illinois 61801, United States

4. Department of Computer Science, Stanford University, Stanford, California 94305, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn406301r

Reference55 articles.

1. The end of the road for silicon?

2. Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

3. Progress in Carbon Nanotube Electronics and Photonics

4. Carbon Nanotubes for High-Performance Electronics—Progress and Prospect

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