Effective Suppression of Amorphous Ga<sub>2</sub>O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices-Reference-Cited by-同舟云学术

Effective Suppression of Amorphous Ga₂O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices

Published:2023-05-10 Issue:20 Volume:15 Page:25058-25065
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Deng Kexin¹²^ORCID,Wang Xinhua¹²^ORCID,Huang Sen¹²^ORCID,Li Pengfei³,Jiang Qimeng¹²,Yin Haibo¹,Fan Jie¹,Wei Ke¹,Zheng Yingkui¹,Shi Jingyuan¹,Liu Xinyu¹²^ORCID

Affiliation:

1. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

Funder

University of Chinese Academy of Sciences

National Key Research and Development Program of China

CAS-Croucher Funding Scheme for Joint Laboratories

Beijing Municipal Science and Technology Commission

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

IMECAS-HKUST-Joint Laboratory of Microelectronics

Publisher

American Chemical Society (ACS)