Effects of Oxygen Addition on the Local Structures of Cosputtered Transparent Conducting Oxide Films-Reference-Cited by-同舟云学术

Effects of Oxygen Addition on the Local Structures of Cosputtered Transparent Conducting Oxide Films

Published:2009-10-28 Issue:47 Volume:113 Page:20463-20466
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Cho Deok-Yong¹,Song Jaewon¹,Hwang Cheol Seong¹

Affiliation:

1. Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea, and Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp905980q

Reference13 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

3. Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system

4. Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

5. Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment andab initiocalculations

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