Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process-Reference-Cited by-同舟云学术

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Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process

Published:2018-04-23 Issue:17 Volume:112 Page:172101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chang Che-Chia¹,Liu Po-Tsun²,Chien Chen-Yu²,Fan Yang-Shun²

Affiliation:

1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

2. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

Funder

The Ministry of Science and Technology, Taiwan, R.O.C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5020583

Reference38 articles.

1. 3D resistive RAM cell design for high-density storage class memory—a review

2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

3. Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

4. 3D Ta/TaOx/TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications

5. Memristive devices for computing

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1. Resistive switching of IGZO-based memristors with electrode modulation and multi-value storage application;Applied Physics A;2024-08

2. Effect of RF power on analog synaptic behavior of sputter-deposited InGaZnO films for neuromorphic computing applications;Ceramics International;2024-08

3. Improvement of Memristive Characteristic of In-Ga-Zn-O Thin-Film Memristor by Conductive Buffer Layers;IEEE Transactions on Electron Devices;2024

4. HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability;ACS Applied Electronic Materials;2023-12-27

5. IGZO/SnOx-based dynamic memristor with fading memory effect for reservoir computing;The Journal of Chemical Physics;2023-12-15

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