Chemical Composition of AlN Thin Films Deposited at 523−723 K Using Dimethylethylamine Alane and Ammonia-Reference-Cited by-同舟云学术

Chemical Composition of AlN Thin Films Deposited at 523−723 K Using Dimethylethylamine Alane and Ammonia

Published:1998-02-19 Issue:3 Volume:10 Page:777-783
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Kidder, J. N.¹,Yun H. K.¹,Rogers, J. W.¹,Pearsall T. P.¹

Affiliation:

1. Department of Materials Science and Engineering, Box 352120, and Department of Chemical Engineering, Box 351750, University of Washington, Seattle, Washington 98195

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm970556u

Reference45 articles.

1. III-V nitrides for electronic and optoelectronic applications

2. Progress and prospects for GaN and the III–V nitride semiconductors

3. Recent advances in metal-organic vapor phase epitaxy

4. Advances in metalorganic vapor-phase epitaxy

5. Design of low-temperature thermal chemical vapor deposition processes

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