On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor (<inline-formula> <tex-math notation="LaTeX">${\pi }$ </tex-math></inline-formula>-FET)-Reference-Cited by-同舟云学术

On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor ( ${\pi }$ -FET)

Published:2015-05 Issue:3 Volume:3 Page:149-157
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Hueting Raymond J. E.,Van Hemert Tom,Kaleli Buket,Wolters Rob A. M.,Schmitz Jurriaan

Funder

Dutch Technology Foundation Stichting Toegepaste Wetenschappen (STW), an Applied Science Division of Nederlandse organisatie voor Wetenschappelijk Onderzoek (NWO)

NanoNextNL, a Micro and Nanotechnology Programme of the Dutch Ministry of Economic Affairs, Agriculture and Innovation (EL&I) and 130 partners

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/7091971/07055254.pdf?arnumber=7055254

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