On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface-Reference-Cited by-同舟云学术

On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface

Published:2011-12-13 Issue:1 Volume:116 Page:947-952
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Han Bo¹,Zhang Qingfan¹,Wu Jinping¹,Han Bing²,Karwacki Eugene J.²,Derecskei Agnes²,Xiao Manchao³,Lei Xinjian³,O’Neill Mark L.³,Cheng Hansong¹⁴

Affiliation:

1. Sustainable Energy Laboratory, China University of Geosciences Wuhan, 388 Lumo Road, Wuhan 430074, China

2. Air Products and Chemicals, Inc. (Headquarters), 7201 Hamilton Boulevard, Allentown, Pennsylvania 18195-1501, United States

3. Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011, United States

4. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp2094802

Reference21 articles.

1. A Nonequilibrium, Atmospheric-Pressure Argon Plasma Torch for Deposition of Thin Silicon Dioxide Films

2. Submicrometer Ultralow-Power TFT With 1.8 nm NAOS $ \hbox{SiO}_{2}/\hbox{20} \ \hbox{nm}$ CVD $\hbox{SiO}_{2}$ Gate Stack Structure

3. Correlation Between Film Properties and Anhydrous HF Vapor Etching Behavior of Silicon Oxide Deposited by CVD Methods

4. Effect of rf bias (ion current density) on the hardness of amorphous silicon oxide films deposited by plasma enhanced chemical vapor deposition

5. Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma

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