Redox Switching Behavior in Resistive Memory Device Designed Using a Solution-Processable Phenalenyl-Based Co(II) Complex: Experimental and DFT Studies-Reference-Cited by-同舟云学术

Redox Switching Behavior in Resistive Memory Device Designed Using a Solution-Processable Phenalenyl-Based Co(II) Complex: Experimental and DFT Studies

Published:2023-02-27 Issue:10 Volume:62 Page:4170-4180
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Kamboj Nisha¹^ORCID,Betal Atanu²,Majumder Moumita³,Sahu Satyajit²^ORCID,Metre Ramesh K.¹^ORCID

Affiliation:

1. Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan 342030, India

2. Department of Physics, Indian Institute of Technology Jodhpur, Rajasthan 342030, India

3. Department of Metallurgical and Materials Engineering, Indian Institute of Technology Jodhpur, Rajasthan 342030, India

Funder

Science and Engineering Research Board

Indian Institute of Technology Jodhpur

Department of Science and Technology, Ministry of Science and Technology, India

Ministry of Human Resource Development

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.2c04264

Reference69 articles.

1. Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials

2. Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure

3. Non-volatile resistive switching for advanced memory applications

4. Oxide Heterostructure Resistive Memory

5. Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

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