A solution-processable benzothiazole-substituted formazanate zinc(<scp>ii</scp>) complex designed for a robust resistive memory device-Reference-Cited by-同舟云学术

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A solution-processable benzothiazole-substituted formazanate zinc(ii) complex designed for a robust resistive memory device

Published:2024 Issue: Volume: Page:
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Birara Sunita¹^ORCID,Saini Shalu²,Majumder Moumita³,Tiwari Shree Prakash²^ORCID,Metre Ramesh K.¹^ORCID

Affiliation:

1. Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan-342030, India

2. Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Rajasthan-342030, India

3. Department of Chemistry, School of Science and Environmental Studies, Dr Vishwanath Karad MIT World Peace University, Pune 411038, Maharashtra, India

Abstract

A novel mononuclear bis(formazanate)zinc complex (1) based on a redox-active formazan ligand has been synthesized and further utilized as an active material for the fabrication of a resistive memory device.

Funder

Science and Engineering Research Board

University Grants Commission

Ministry of Human Resource Development

Indian Institute of Technology Jodhpur

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/DT/D4DT01640H

Reference76 articles.

1. Recent advances in organic‐based materials for resistive memory applications

2. Resistive memory switching of transition-metal complexes controlled by ligand design

3. Metal-containing organic compounds for memory and data storage applications

4. Polymer and Organic Nonvolatile Memory Devices

5. Polymer-Based Resistive Memory Materials and Devices

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