Resistive memory switching of transition-metal complexes controlled by ligand design-Reference-Cited by-同舟云学术

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Resistive memory switching of transition-metal complexes controlled by ligand design

Published:2019-08 Issue: Volume:393 Page:21-36
ISSN:0010-8545
Container-title:Coordination Chemistry Reviews
language:en
Short-container-title:Coordination Chemistry Reviews

Author:

Shao Jiang-Yang,Cui Bin-Bin,Tang Jian-Hong,Zhong Yu-Wu

Funder

National Natural Science Foundation of China

Beijing National Science Foundation

Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Physical and Theoretical Chemistry,Inorganic Chemistry

Reference102 articles.

1. Nanoionics-based resistive switching memories

2. Donor–acceptor polymers for advanced memory device applications

3. Polymer-Based Resistive Memory Materials and Devices

4. Organic and hybrid resistive switching materials and devices

5. Recent progress in organic resistance memory with small molecules and inorganic–organic hybrid polymers as active elements

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