Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials-Reference-Cited by-同舟云学术

Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials

Published:2015 Issue:9 Volume:44 Page:2615-2628
ISSN:0306-0012
Container-title:Chemical Society Reviews
language:en
Short-container-title:Chem. Soc. Rev.

Author:

Tan Chaoliang¹²³⁴,Liu Zhengdong¹²³⁴⁵,Huang Wei⁵⁶⁷⁸⁹,Zhang Hua¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Nanyang Technological University

3. Singapore 639798

4. Singapore

5. Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)

6. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)

7. Nanjing University of Posts & Telecommunications (NUPT)

8. Nanjing 210023

9. China

Abstract

This tutorial review summarizes the recent progress in the rational design and preparation of solution-processed ultrathin 2D nanomaterials for non-volatile resistive memory devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CS/C4CS00399C

Reference50 articles.

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4. Electric Field Effect in Atomically Thin Carbon Films

5. Honeycomb Carbon: A Review of Graphene

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