Mechanisms for the Trimethylaluminum Reaction in Aluminum Oxide Atomic Layer Deposition on Sulfur Passivated Germanium
Author:
Affiliation:
1. imec, Kapeldreef 75, 3001 Leuven, Belgium
2. Chemistry Department, PLASMANT group, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp, Belgium
3. Chemistry Departement, University of Leuven, Celestijnenlaan 200F, B-3001 Leuven, Belgium
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp206070y
Reference48 articles.
1. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
2. H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface
3. Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium
4. (Invited) Chemisorption Reaction Mechanisms for Atomic Layer Deposition of High-k Oxides on High Mobility Channels
5. Hafnium oxide gate dielectrics on sulfur-passivated germanium
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