Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces-Reference-Cited by-同舟云学术

Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces

Published:2016-03 Issue: Volume:366 Page:455-463
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sardashti Kasra,Hu Kai-Ting,Tang Kechao,Park Sangwook,Kim Hyonwoong,Madisetti Shailesh,McIntyre Paul,Oktyabrsky Serge,Siddiqui Shariq,Sahu Bhagawan,Yoshida Noami,Kachian Jessica,Kummel Andrew

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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