Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers-Reference-Cited by-同舟云学术

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Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers

Published:2013-12-23 Issue:1 Volume:8 Page:1031-1038
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Liu Han¹,Si Mengwei¹,Deng Yexin¹,Neal Adam T.¹,Du Yuchen¹,Najmaei Sina²,Ajayan Pulickel M.²,Lou Jun²,Ye Peide D.¹

Affiliation:

1. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States

2. Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas 77005, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn405916t

Reference22 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Single-layer MoS2 transistors

4. Integrated Circuits Based on Bilayer MoS2 Transistors

5. $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

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1. Role of electrostatic doping on the resistance of metal and two-dimensional materials edge contacts;Physical Review Research;2024-09-10

2. Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS2/metal contacts;Scientific Reports;2024-09-08

3. An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions;ACS Applied Materials & Interfaces;2024-04-22

4. Electrical Properties of Electrochemically Exfoliated 2D Transition Metal Dichalcogenides Transistors for Complementary Metal‐Oxide‐Semiconductor Electronics;Advanced Electronic Materials;2024-03-15

5. Ultrashort channel MoSe₂ transistors with selenium atoms replaced at the interface: first-principles quantum-transport study;Nanotechnology;2024-02-09

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