Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability-Reference-Cited by-同舟云学术

Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability

Published:2012-09-19 Issue:10 Volume:4 Page:5416-5421
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Hyun-Suk¹,Park Joon Seok¹,Jeong Hyun-Kwang²,Son Kyoung Seok¹,Kim Tae Sang¹,Seon Jong-Baek¹,Lee Eunha³,Chung Jae Gwan³,Kim Dae Hwan²,Ryu Myungkwan¹,Lee Sang Yoon¹

Affiliation:

1. Display Device Lab, Samsung Advanced Institute of Technology, Yongin, 446-712, Republic of Korea

2. School of Electrical Engineering, Kookmin University, Seoul, 136-702, Republic of Korea

3. Analytical Engineering Group, Samsung Advanced Institute of Technology, Yongin, 446-712, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am301342x

Reference22 articles.

1. 4.1: Low-Temperature-Processed IGZO TFTs for Flexible AMOLED with Integrated Gate Driver Circuits

2. 4.2: Integrated Scan Driver with Oxide TFTs Using Floating Gate Method

3. 35.3: Distinguished Paper: A Novel Self-Aligned Top-Gate Oxide TFT for AM-OLED Displays

4. 21.3: 4.0 In. QVGA AMOLED Display Using In-Ga-Zn-Oxide TFTs with a Novel Passivation Layer

5. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

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