Affiliation:
1. School of Electronic and Computer Engineering Peking University Shenzhen China 518055
2. School of Integrated Circuits Peking University Beijing China 100871
Abstract
To effectively enhance the mobility without other degradations, such as much negative threshold voltage, this work fabricated the a‐IGZO/a‐IZO heterojunction‐channel TFTs with dual‐gate structure. The fabricated a‐IZO/a‐IGZO with thicker a‐IGZO TFT shows high performance, including high mobility of 54.6 cm2 /Vs, small subthreshold swing of 0.26 V/dec, and good stability under PBTS and NBTIS.