Vertically Integrated Nanowire-Based Unified Memory-Reference-Cited by-同舟云学术

Vertically Integrated Nanowire-Based Unified Memory

Published:2016-09-02 Issue:9 Volume:16 Page:5909-5916
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lee Byung-Hyun¹²,Ahn Dae-Chul¹,Kang Min-Ho³,Jeon Seung-Bae¹,Choi Yang-Kyu¹

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

2. Department of Memory Business, Samsung Electronics, San 16 Banwol-Dong, Hwasung City, Gyeonggi-Do 18448, Republic of Korea

3. Department of Nano-Process, National Nanofab Center (NNFC), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b02824

Reference35 articles.

1. Emerging memories

2. Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices

3. Emerging memory technologies: Trends, challenges, and modeling methods

4. Ultra-high-density interconnection technology of three-dimensional packaging

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