Cross‐Point Arrays with Low‐Power ITO‐HfO 2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires-Reference-Cited by-同舟云学术

Cross‐Point Arrays with Low‐Power ITO‐HfO 2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires

Published:2020-05-11 Issue:6 Volume:6 Page:2000154
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Persson Karl‐Magnus¹^ORCID,Ram Mamidala Saketh¹,Kilpi Olli‐Pekka¹,Borg Mattias¹²,Wernersson Lars‐Erik¹

Affiliation:

1. Electrical and Information technologyLund University Box 118 Lund 221 00 Sweden

2. NanoLundLund University Box 118 Lund 221 00 Sweden

Funder

Stiftelsen för Strategisk Forskning

Knut och Alice Wallenbergs Stiftelse

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000154

Reference28 articles.

1. Towards spike-based machine intelligence with neuromorphic computing

2. S.Angizi Z.He D.Reis X. S.Hu W.Tsai S. J.Lin D.Fan presented at 2019 IEEE Computer Soc. Annual Symp. VLSI Miami FLJuly2019.

3. Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications

4. H.Li T. F.Wu A.Rahimi K.Li M.Rusch C.Lin J.Hsu M. M.Sabry S. B.Eryilmaz J.Sohn W.Chiu M.Chen T.Wu J.Shieh W.Yeh J. M.Rabaey S.Mitra H. P.Wong presented at 2016 IEEE Int. Electron Devices Meet. San Francisco CA December2016.

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing;Advanced Electronic Materials;2024-08-05

2. Sol-Gel Derived ZnO Thin Films with Nonvolatile Resistive Switching Behavior for Future Memory Applications;Coatings;2024-07-02

3. Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems;The Journal of Chemical Physics;2024-04-08

4. Effect of heterojunction order between CaTiO3 and Mn doped SrTiO3 on memristive performance and its mechanism analysis;Applied Materials Today;2023-12

5. Resistive Memory with Functional Duality-Non Volatile Emerging Memory & Nano Biosensors;Memristors - the Fourth Fundamental Circuit Element - Theory, Device, and Applications [Working Title];2023-10-05