Cross‐Point Arrays with Low‐Power ITO‐HfO 2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires-Reference-Cited by-同舟云学术

Cross‐Point Arrays with Low‐Power ITO‐HfO 2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires

Published:2020-05-11 Issue:6 Volume:6 Page:2000154
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Persson Karl‐Magnus¹^ORCID,Ram Mamidala Saketh¹,Kilpi Olli‐Pekka¹,Borg Mattias¹²,Wernersson Lars‐Erik¹

Affiliation:

1. Electrical and Information technologyLund University Box 118 Lund 221 00 Sweden

2. NanoLundLund University Box 118 Lund 221 00 Sweden

Funder

Stiftelsen för Strategisk Forskning

Knut och Alice Wallenbergs Stiftelse

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000154

Reference28 articles.

1. Towards spike-based machine intelligence with neuromorphic computing

2. S.Angizi Z.He D.Reis X. S.Hu W.Tsai S. J.Lin D.Fan presented at 2019 IEEE Computer Soc. Annual Symp. VLSI Miami FLJuly2019.

3. Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications

4. H.Li T. F.Wu A.Rahimi K.Li M.Rusch C.Lin J.Hsu M. M.Sabry S. B.Eryilmaz J.Sohn W.Chiu M.Chen T.Wu J.Shieh W.Yeh J. M.Rabaey S.Mitra H. P.Wong presented at 2016 IEEE Int. Electron Devices Meet. San Francisco CA December2016.

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