Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications-Reference-Cited by-同舟云学术

Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications

Published:2019-03 Issue:3 Volume:66 Page:1281-1288
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Grossi Alessandro^ORCID,Vianello Elisa,Sabry Mohamed M.^ORCID,Barlas Marios,Grenouillet Laurent,Coignus Jean^ORCID,Beigne Edith^ORCID,Wu Tony^ORCID,Le Binh Q.,Wootters Mary K.^ORCID,Zambelli Cristian^ORCID,Nowak Etienne,Mitra Subhasish^ORCID

Funder

Defense Advanced Research Projects Agency

NSF-SRC/Nanoelectronics Research Initiative/Global Research Collaboration Energy-Efficient Computing: From Devices to Architectures

STARnet SONIC

National Science Foundation

Stanford SystemX Alliance

Nanyang Technological University

AME Programmatic Hardware Software Co-Optimization for Deep Learning

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielaam/16/8649693/8640245-aam.pdf

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