Controlled Growth of 1D MoSe2 Nanoribbons with Spatially Modulated Edge States-Reference-Cited by-同舟云学术

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Controlled Growth of 1D MoSe2 Nanoribbons with Spatially Modulated Edge States

Published:2017-01-20 Issue:2 Volume:17 Page:1116-1120
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Cheng Fang¹²^ORCID,Xu Hai¹²,Xu Wentao³²,Zhou Pinjia³²,Martin Jens³²,Loh Kian Ping¹²^ORCID

Affiliation:

1. Department of Chemistry, National University of Singapore, Singapore 117543

2. Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546

3. Department of Physics, National University of Singapore, Singapore 117551

Funder

National Research Foundation Singapore

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04715

Reference30 articles.

1. The valley Hall effect in MoS 2 transistors

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Transition Metal Dichalcogenides and Beyond: Synthesis, Properties, and Applications of Single- and Few-Layer Nanosheets

4. Valley polarization in MoS2 monolayers by optical pumping

5. Valley-selective circular dichroism of monolayer molybdenum disulphide

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