Gate Quantum Capacitance Effects in Nanoscale Transistors-Reference-Cited by-同舟云学术

Gate Quantum Capacitance Effects in Nanoscale Transistors

Published:2019-09-18 Issue:10 Volume:19 Page:7130-7137
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Desai Sujay B.¹²³^ORCID,Fahad Hossain M.¹²³^ORCID,Lundberg Theodor¹,Pitner Gregory⁴^ORCID,Kim Hyungjin¹²³,Chrzan Daryl²⁵,Wong H.-S. Philip⁴,Javey Ali¹²³^ORCID

Affiliation:

1. Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, United States

2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

3. Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, California 94720, United States

4. Electrical Engineering, Stanford University, Stanford, California 94305, United States

5. Materials Science and Engineering Department, University of California, Berkeley, Berkeley, California 94720, United States

Funder

Lam Research Corporation

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b02660

Reference35 articles.

1. Quantum Transport: Atom to Transistor

2. Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor

3. Quantum capacitance devices

4. Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors

5. Single-layer MoS2 transistors

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