Role of Quantum Capacitance in a Carbon Nanotube Tunneling Device-Reference-Cited by-同舟云学术

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Role of Quantum Capacitance in a Carbon Nanotube Tunneling Device

Published:2024-04-24 Issue:5 Volume:6 Page:3474-3479
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kim Wu-Sin¹,Myoung Nojoon²³^ORCID,Bae Myung-Ho⁴^ORCID,Kim Ju-Jin¹

Affiliation:

1. Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea

2. Department of Physics Education, Chosun University, Gwangju 61452, Republic of Korea

3. Institute of Well-Aging Medicare & Chosun University LAMP Center, Chosun University, Gwangju 61452, Republic of Korea

4. Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea

Funder

National Research Council of Science and Technology

National Research Foundation of Korea

Korea Research Institute of Standards and Science

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00279

Reference27 articles.

1. Quantum capacitance devices

2. Quantum capacitance in nanoscale device modeling

3. Carrier density and quantum capacitance for semiconducting carbon nanotubes

4. Quantum Capacitance Limited Vertical Scaling of Graphene Field-Effect Transistor

5. Shailendra, S. R.; Ramakrishnan, V. N. In Analysis of Quantum Capacitance on Different Dielectrics and Its Dependence on Threshold Voltage of CNTFET, International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2), 23–25 March, 2017; pp 213–217.

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