Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor-Reference-Cited by-同舟云学术

Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor

Published:2007-02-28 Issue:3 Volume:7 Page:642-646
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Liang Gengchiau¹,Xiang Jie¹,Kharche Neerav¹,Klimeck Gerhard¹,Lieber Charles M.¹,Lundstrom Mark¹

Affiliation:

1. School of Electrical and Computer Engineering and Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907, Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl062596f

Reference24 articles.

1. Ge/Si nanowire heterostructures as high-performance field-effect transistors

2. High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

3. Silicon Vertically Integrated Nanowire Field Effect Transistors

4. High-performance thin-film transistors using semiconductor nanowires and nanoribbons

5. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

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