Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM-Reference-Cited by-同舟云学术

Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM

Published:2021-02-23 Issue:5 Volume:21 Page:2018-2025
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Beyer Andreas¹^ORCID,Munde Manveer Singh¹,Firoozabadi Saleh¹,Heimes Damien¹,Grieb Tim²,Rosenauer Andreas²,Müller-Caspary Knut³,Volz Kerstin¹

Affiliation:

1. Materials Science Centre and Department of Physics, Philipps University Marburg, Hans-Meerwein-Straße 6, Marburg 35032, Germany

2. Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, Bremen 28359, Germany

3. Ernst Ruska-Center for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, Wilhelm-Johnen-Straße, RWTH Aachen University, II. Institute of Physics, Otto-Blumenthal-Straße, Aachen 52074, Germany

Funder

Bundesministerium f?r Bildung und Forschung

Deutsche Forschungsgemeinschaft

Helmholtz Association

H2020 Excellent Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c04544

Reference34 articles.

1. Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy

2. Electrical characterization of an operating Sipn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy

3. Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions

4. Analytical and numerical simulation of electron beam induced current profiles in p-n junctions

5. A New method for Investigating the Electric Field Regions of p-n Junctions

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